APT10DC120HJ APT10DC120HJ ? rev 0 november, 2009 www.microsemi.com 1-3 absolute maximum ratings symbol parameter max ratings unit v r maximum dc reverse voltage v rrm maximum peak repetitive reverse voltage 1200 v i f(av) maximum average forward current duty cycle = 50% t c = 100c 10 i fsm non-repetitive forward surge current 10 s t c = 25c 250 a these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com isotop ? v rrm = 1200v i c = 10a @ tc = 100c application ? switch mode power supplies rectifier ? induction heating ? welding equipment ? high speed rectifiers features ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? isotop ? package (sot-227) ? very low stray inductance ? high level of integration benefits ? outstanding performance at high frequency operation ? low losses ? low noise switching ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? rohs compliant isotop ? sic diode full bridge power module ~ ~ - +
APT10DC120HJ APT10DC120HJ ? rev 0 november, 2009 www.microsemi.com 2-3 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 1.6 1.8 v f diode forward voltage i f = 10a t j = 175c 2.3 3 v t j = 25c 32 200 i rm maximum reverse leakage current v r = 1200v t j = 175c 56 1000 a q c total capacitive charge i f = 10a, v r = 600v di/dt =500a/s 40 nc f = 1mhz, v r = 200v 96 c total capacitance f = 1mhz, v r = 400v 69 pf thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance 1.65 r thja junction to ambient 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -55 175 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) 3.30 (.130) 4.57 (.180)
APT10DC120HJ APT10DC120HJ ? rev 0 november, 2009 www.microsemi.com 3-3 typical performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 25 50 75 100 400 600 800 1000 1200 1400 1600 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 100 200 300 400 500 600 700 1 10 100 1000 v r reverse voltage c, capacitance (pf) isotop? is a registered trademark of st microelectronics nv microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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